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| FDD6680AS April 2008 FDD6680AS General Description tm 30V N-Channel PowerTrench SyncFET The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode. (R) TM Features * 55 A, 30 V RDS(ON) max= 10.5 m @ VGS = 10 V RDS(ON) max= 13.0 m @ VGS = 4.5 V * Includes SyncFET Schottky body diode * Low gate charge (21nC typical) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability . Applications * DC/DC converter * Low side notebook D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 30 20 (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Unit s V V A W 55 100 60 3.1 1.3 -55 to +150 TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.1 40 96 C/W C/W C/W Package Marking and Ordering Information Device Marking FDD6680AS (c)2008 Fairchild Semiconductor Corporation Device FDD6680AS Reel Size 13'' Tape width 16mm Quantity 2500 units FDD6680AS Rev A1(X) FDD6680AS Electrical Characteristics Symbol WDSS IAR TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 15 V, ID=13.5A Min Typ 54 Max 205 13.5 Units mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) VGS = 0 V, ID = 1 mA ID = 1 mA, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V 30 29 500 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 1 mA ID = 1 mA, Referenced to 25C VGS = 10 V, ID = 12.5 A VGS = 4.5 V, ID = 10 A VGS= 10 V, ID = 12.5A, TJ= 125C VGS = 10 V, VDS = 15 V, VDS = 5 V ID = 12.5 A 1 1.4 -3 8.6 10.3 12.5 3 V mV/C m 10.5 13.0 16.0 ID(on) gFS 50 44 A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1200 350 120 pF pF pF VGS = 15 mV, f = 1.0 MHz 1.6 Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time 10 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 6 28 12 14 VDD = 15 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 13 20 11 21 VDD = 15 V, ID = 12.5 A 11 3 4 20 12 45 22 25 23 32 20 29 15 ns ns ns ns ns ns ns ns nC nC nC nC Total Gate Charge at Vgs=10V Total Gate Charge at Vgs=5V Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 4.4 A VGS = 0 V, IS = 7 A IF = 12.5A, diF/dt = 300 A/s (Note 2) (Note 2) 4.4 0.5 0.6 17 11 0.7 A V nS nC (Note 3) FDD6680AS Rev A1 (X) FDD6680AS Electrical Characteristics TA = 25C unless otherwise noted Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% PD R DS(ON) 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6680AS Rev A1 (X) FDD6680AS Typical Characteristics 100 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 80 ID, DRAIN CURRENT (A) 6.0V 60 4.5V 3.5V 4.0V 2 VGS = 3.0V 1.8 1.6 3.5V 4.0V 1.2 4.5V 5.0V 6.0V 1 10V 1.4 40 3.0V 20 2.5V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3 0.8 0 20 40 60 ID, DRAIN CURRENT (A) 80 100 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.032 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 12.5A VGS =10V ID = 6.3A 0.026 1.4 1.2 0.02 TA = 125 C 0.014 TA =25 C 0.008 o o 1 0.8 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 80 ID, DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 60 1 TA = 125oC 25 C o 40 TA = 125oC -55oC 0.1 -55oC 20 25oC 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 4.5 0.01 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 1 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD6680AS Rev A1 (X) FDD6680AS Typical Characteristics (continued) 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 12.5A 8 20V 6 15V 4 CAPACITANCE (pF) VDS = 10V 1800 f = 1MHz VGS = 0 V 1500 1200 Ciss 900 600 Coss Crss 2 300 0 0 5 10 15 20 25 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE RJA = 96oC/W TA = 25 C o 80 SINGLE PULSE RJA = 96C/W TA = 25C 10 60 1 40 0.1 20 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 96 C/W 0.1 0.1 0.05 P(pk 0.02 0.01 0.01 SINGLE PULSE t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6680AS Rev A1 (X) FDD6680AS Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDD6680AS. Current: 3A/div Schottky barrie diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 IDSS, REVERSE LEAKAGE CURRENT (A) 10nS/div TA = 125oC 0.01 Figure 12. FDD6680AS SyncFET body diode reverse recovery characteris For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDD6680). 0.001 TA = 100oC 0.0001 0.00001 TA = 25oC 0.000001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. Current: 3A/div 10nS/div Figure 13. Non-SyncFET (FDD6680) body diode reverse recovery characteristic. FDD6680AS Rev A1 (X) FDD6680AS Typical Characteristics VDS VGS RGE VGS 0V tp L tP DUT IAS 0.01 + VDD IAS BVDSS VDS VDD vary tP to obtain required peak IAS tAV Figure 12. Unclamped Inductive Load Test Circuit Drain Current Same type as Figure 13. Unclamped Inductive Waveforms + 10V 50k 10F 1F - + VDD DUT VGS QG(TOT) 10V QGS QGD VGS Ig(REF Charge, (nC) Figure 14. Gate Charge Test Circuit Figure 15. Gate Charge Waveform tON td(ON) VDS + DUT VDD 0V 10% 90% 50% 10% 50% 10% 90% VDS VGS RGEN VGSPulse Width 1s RL tr tOFF td(OFF tf ) 90% VGS 0V Duty Cycle 0.1% Pulse Width Figure 16. Switching Time Test Circuit Figure 17. Switching Time Waveforms FDD6680AS Rev A1 (X) FDD6680AS TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDD6680AS Rev A1(X) |
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